CMOS Technology:

Low STATIC POWER DISSIPATION. High input impedance (low drive current). Scalable threshold voltage. High noise margin. High packing density. High delay sensitivity to load (FANOUT limitations). Low output drive current. Low gm (gm a VIN). Bidirectional capability. A near ideal switching device

Bipolar technology:

High power dissipation. Low input impedance (high drive current). Low voltage swing LOGIC. Low packing density. Low delay sensitivity to load. High output drive current. High gm (gm an eVin). High ft at low current. Essentially unidirectional.

CMOS Technology:

Low static power dissipation. High input impedance (low drive current). Scalable threshold voltage. High noise margin. High packing density. High delay sensitivity to load (fanout limitations). Low output drive current. Low gm (gm a VIN). Bidirectional capability. A near ideal switching device

Bipolar technology:

High power dissipation. Low input impedance (high drive current). Low voltage swing logic. Low packing density. Low delay sensitivity to load. High output drive current. High gm (gm an eVin). High ft at low current. Essentially unidirectional.