The width of forbidden gap in silicon crystal is 1.1eV.When the crystal is converted into n type semiconductor,then the distance of fermi energy level from conduction band is 1. equal to 0.55eV2. equal to 1.1eV3. less than 0.55eV4. greater than 0.55eVplz answer

The width of forbidden gap in silicon crystal is 1.1eV.When the crysta

1.	The width of forbidden gap in silicon crystal is 1.1eV.When the crystal is converted into n type semiconductor,then the distance of fermi energy level from conduction band is 1. equal to 0.55eV2. equal to 1.1eV3. less than 0.55eV4. greater than 0.55eVplz answer
Answer» tion:THE BRAINLIEST ANSWER!itzshrutiBasrani GeniusFermi level in intrinsic semiconductor LIES in middle of the energy forbidden gap . In CASE of silicon it is at .55eV ,but when it doped with pentavalent n-type semiconductor fermi energy level rises up just below conduction band so that electron can easily MOVE to conduction band . So energy gap in fermi level and conduction band will be LESS than .55eV Option 3 is correctRead more on Brainly.in - brainly.in/question/17272811#readmore

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The width of forbidden gap in silicon crystal is 1.1eV.When the crystal is converted into n type semiconductor,then the distance of fermi energy level from conduction band is 1. equal to 0.55eV2. equal to 1.1eV3. less than 0.55eV4. greater than 0.55eV​plz answer

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The width of forbidden gap in silicon crystal is 1.1eV.When the crystal is converted into n type semiconductor,then the distance of fermi energy level from conduction band is 1. equal to 0.55eV2. equal to 1.1eV3. less than 0.55eV4. greater than 0.55eVplz answer