Related InterviewSolutions

• In the forward bias condition, the resistance of point contact diode is_________(a) less than that of a general PN diode(b) greater than that of a general PN diode(c) equal to that of a general PN diode(d) varies exponentially than that of a general PN diodeI got this question in an online interview.I'm obligated to ask this question of The Point Contact Diode topic in division Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• What happens in PIN diode for low frequency model?(a) reactance decreases(b) conductance increases(c) resistance increases(d) reactance increasesI have been asked this question by my college professor while I was bunking the class.This interesting question is from p-i-n Diode and its Characteristics in chapter Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• The operating frequencies of the point contact diode is_________(a) 30KHz or above(b) 10GHz or above(c) 30GHz or above(d) 10KHz or aboveI had been asked this question by my school teacher while I was bunking the class.I'm obligated to ask this question of The Point Contact Diode topic in chapter Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• In the construction of tunnnel diode,why is the pellet soldered to anode contact and a tindot to cathode contact via a mesh screen?(a) for better conduction and reduce inductance respectively(b) for heat dissipation and increase conduction respectively(c) for heat dissipation and reduce induction respectively(d) for better conduction and reduce inductance respectivelyThis question was posed to me in semester exam.My question is from Tunnel Diodes and its Characteristics topic in chapter Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• The zener diode in the circuit has a zener voltage of 5.8V and knee current of 0.5mA. The maximum load current drawn with proper function over input voltage range between 20 and 30V is?(a) 23.7mA(b) 20mA(c) 26mA(d) 48.3mAI have been asked this question in an online quiz.My question comes from Breakdown Diodes topic in section Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• The barrier layer capacitance of a point contact diode is_________(a) 0.1pF to 1pF(b) 5pF to 50pF(c) 0.2pF to 2pF(d) 0.008µF to 20µFThis question was posed to me by my college professor while I was bunking the class.I'd like to ask this question from The Point Contact Diode in portion Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• The forward resistance for a PIN diode is given by ________(a) RF = W/σP(b) RF = W/σN(c) RF = WσP(d) RF = WσNI had been asked this question in exam.My doubt stems from p-i-n Diode and its Characteristics topic in portion Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• In high frequency model, the values of resistance ‘R’ and capacitance ‘C’ are _______(a) 0.1 to 10KΩ and 0.02 to 2pF respectively(b) 1 to 10KΩ and 0.02 to 2pF respectively(c) 10 to 100KΩ and 0.02 to 2pF respectively(d) 0.1 to 10KΩ and 2 to 20pF respectivelyThe question was asked by my school teacher while I was bunking the class.My enquiry is from p-i-n Diode and its Characteristics in section Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• The application of a contact diode is_________(a) Clampers and clippers(b) Voltage multipliers(c) Rectifiers(d) AM detectorsI have been asked this question in an interview.I would like to ask this question from The Point Contact Diode in portion Semiconductor-Diode Characteristics of Electronic Devices & Circuits
• During forward bias, the PIN diode acts as _______(a) a variable resistor(b) a variable capacitor(c) a switch(d) an LEDThis question was addressed to me in exam.My question is taken from p-i-n Diode and its Characteristics in division Semiconductor-Diode Characteristics of Electronic Devices & Circuits