The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is 6×1019 per cubic metre. When some phosphorous impurity is doped into a germanium sample, the concentration of conduction electrons increases to 2×1023 per cubic metre. The concentration of the holes in the doped germanium is 18×10x. The value of x is .(Integer only)

The product of the hole concentration and the conduction electron conc

1.	The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is 6×1019 per cubic metre. When some phosphorous impurity is doped into a germanium sample, the concentration of conduction electrons increases to 2×1023 per cubic metre. The concentration of the holes in the doped germanium is 18×10x. The value of x is .(Integer only)
Answer» The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is $6 \times 10^{19}$ per cubic metre. When some phosphorous impurity is doped into a germanium sample, the concentration of conduction electrons increases to $2 \times 10^{23}$ per cubic metre. The concentration of the holes in the doped germanium is $18 \times 10^{x}$ . The value of $x$ is .(Integer only)