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The energy gap of pure Si is 1.1 eV. The mobilities of electrons and holes are respectively 0.135 m2V−1s−1 and 0.048 m2V−1s−1 and can be taken as independent of temperature. The intrinsic carrier concentration is given by ni=n0e−E02kT where n0 is a constant, Eg the gap width and k the Boltzmann's constant whose value is 1.36×10−23 JK−1. Find the ratio of the electrical conductivities of Si at 600 K and 300 K in the form of n×104. And report the value of n, where n is an integer - |
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Answer» The energy gap of pure Si is 1.1 eV. The mobilities of electrons and holes are respectively 0.135 m2V−1s−1 and 0.048 m2V−1s−1 and can be taken as independent of temperature. The intrinsic carrier concentration is given by ni=n0e−E02kT where n0 is a constant, Eg the gap width and k the Boltzmann's constant whose value is 1.36×10−23 JK−1. Find the ratio of the electrical conductivities of Si at 600 K and 300 K in the form of n×104. And report the value of n, where n is an integer - |
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