Related InterviewSolutions

• The _____________ of a MOSFET is affected by the voltage which is applied to the back contact.(a) Threshold Voltage(b) Output Voltage(c) Both threshold and output voltage(d) Neither of the threshold nor the output voltageI got this question during an interview.This intriguing question comes from The Body Effect topic in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
• Find V1 and V2(a) 2V and -4V(b) -2V and 4V(c) 2V and 4V(d) -2V and -4VThe question was posed to me during an online exam.My enquiry is from MOSFETs Circuits at DC in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
• The transistor in the circuit shown below has kn = 0.4 mA/V^2, Vt = 0.5 V and λ = 0. Operation at the edge of saturation is obtained when(a) (W/L)RD = 0.5 kΩ(b) (W/L)RD = 1.0 kΩ(c) (W/L)RD = 1.5 kΩ(d) (W/L)RD = 2.0 kΩThe question was posed to me during an interview.My question is from MOSFETs Circuits at DC topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
• For a p channel MOSFET which of the following is not true?(a) The source and drain are a p type semiconductor(b) The induced channel is p type region which is induced by applying a positive potential to the gate(c) The substrate is a n type semiconductor(d) None of the mentionedThis question was posed to me during an internship interview.I want to ask this question from MOSFETs Device Strucuture and Physical Operation in portion MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
• Which of the following is true for the saturation region?(a) VDG ≤ |Vtp|(b) VSD ≤| VOV|(c) VDG < |Vtp|(d) VSD
• A breakdown effect that occurs in modern devices at low voltages (of around 20 V) is(a) Weak avalanche(b) Strong avalanche(c) Weak storm(d) Punch-throughThe question was posed to me during an online interview.Query is from The Body Effect in section MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
• Bias point is also referred by the name(a) DC Operating Point(b) Quiescent Point(c) None of the mentioned(d) All of the mentionedI got this question in an interview for internship.I'm obligated to ask this question of MOSFET in Amplfier Design in chapter MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
• The MOSFET in the following circuit is in which configuration?(a) Common Source (CS)(b) Common Gate (CG)(c) Common Drain (CD)(d) None of the mentionedI got this question at a job interview.This key question is from Basic MOSFET Amplifier Configurations in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
• Determine the conditions in which the MOSFET is operating in the triode region.i. VGD > Vt (Threshold voltage)ii. VDS > VOViii. ID ∝ (VOV – 0.5VDS)VDS(a) i, ii, and iii are correct(b) i and iii are correct(c) i and ii are correct(d) ii and iii are correctThis question was addressed to me in an interview for internship.My enquiry is from MOSFETs Current-Voltage Characterisitcs topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits
• An NMOS transistor has Vt0 = 0.8 V, 2 φf = 0.7 V, and γ = 0.4 V1/2. Find Vt when VSB = 3 V.(a) 0.12 V(b) 1.23 V(c) 2.34 V(d) 3.45 VThe question was posed to me during an internship interview.My doubt is from The Body Effect topic in division MOS Field Effect Transistors (MOSFETs) of Electronic Devices & Circuits