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In an intrinsicsemiconductor the energy gap Egis1.2 eV. Its hole mobility is much smaller than electron mobility andindependent of temperature. What is the ratio between conductivity at600K and that at 300K? Assume that the temperature dependence ofintrinsic carrier concentration niisgiven bywhere n0 isa constant. |
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Answer» In an intrinsic
where n0 is |
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