1.

In an intrinsicsemiconductor the energy gap Egis1.2 eV. Its hole mobility is much smaller than electron mobility andindependent of temperature. What is the ratio between conductivity at600K and that at 300K? Assume that the temperature dependence ofintrinsic carrier concentration niisgiven bywhere n0 isa constant.

Answer»

In an intrinsic
semiconductor the energy gap Egis
1.2 eV. Its hole mobility is much smaller than electron mobility and
independent of temperature. What is the ratio between conductivity at
600K and that at 300K? Assume that the temperature dependence of
intrinsic carrier concentration niis
given by



where n0 is
a constant.



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