In an intrinsic semiconductor the energy gap Egis 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration n_(i)is given by: n_(i) = n_(o) "exp" (-E_(g)/(2k_(B)T)) Where n_(0) is a constant.

In an intrinsic semiconductor the energy gap Egis 1.2eV. Its hole mobi

1.	In an intrinsic semiconductor the energy gap Egis 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration n_(i)is given by: n_(i) = n_(o) "exp" (-E_(g)/(2k_(B)T)) Where n_(0) is a constant.
Answer» SOLUTION :About `1 XX 10^(5)`

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