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In an intrinsic semiconductor the energy gap Eg is 1.2eV. Its holemobility is much smaller than electron mobility and independent oftemperature. What is the ratio between conductivity at 600K andthat at 300K? Assume that the temperature dependence of intrinsiccarrier concentration ni is given byni=n0exp(-Eg/2kBT) where n0is a constant.

Answer» In an intrinsic semiconductor the energy gap Eg is 1.2eV. Its holemobility is much smaller than electron mobility and independent oftemperature. What is the ratio between conductivity at 600K andthat at 300K? Assume that the temperature dependence of intrinsiccarrier concentration ni is given byni=n0exp(-Eg/2kBT) where n0is a constant.


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