IL. Answer the following Questions03. Describe the following lerms (1)

1.	IL. Answer the following Questions03. Describe the following lerms (1) minority carrier injection and (if) Break down voltage in revebias
Answer» When a p-n juction is forward biased,minority carriersareinjectedinto the semiconductors on the two sides of the junction. Theseminority carriersdiffuse about an eventually recombine with the majoritycarriers. The distribution of theminority carriersisdescribedby the diffusion equation. The maximumreverse bias voltagethat can be applied to a p-n diode is limited bybreakdown.Breakdownis characterized by the rapid increase of the current underreverse bias. The corresponding appliedvoltageis referred to as thebreakdown voltage. Thebreakdown voltageis a key parameter of power devices.

IL. Answer the following Questions03. Describe the following lerms (1) minority carrier injection and (if) Break down voltage in revebias

Answer»

When a p-n juction is forward biased,minority carriersareinjectedinto the semiconductors on the two sides of the junction. Theseminority carriersdiffuse about an eventually recombine with the majoritycarriers. The distribution of theminority carriersisdescribedby the diffusion equation.

The maximumreverse bias voltagethat can be applied to a p-n diode is limited bybreakdown.Breakdownis characterized by the rapid increase of the current underreverse bias. The corresponding appliedvoltageis referred to as thebreakdown voltage. Thebreakdown voltageis a key parameter of power devices.

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